Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector
Creators
- 1. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
- 2. Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP 70239, 54506 Vandoeuvre (France)
- 3. Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse (France)
- 4. Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau (France)
- 5. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)
Description
Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (Pc) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determined only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.
Additional details
Identifiers
- DOI
- 10.1063/1.4945768;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 108
- Journal Issue
- 15
- Journal Page Range
- p. 152404-152404.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48036117
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANISOTROPY; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; LAYERS; LIGHT EMITTING DIODES; MAGNESIUM OXIDES; MAGNETIC FIELDS; MAGNETIC TUNNEL JUNCTIONS; MAGNETIZATION; QUANTUM WELLS; SPIN; THICKNESS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; DIMENSIONS; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MAGNESIUM COMPOUNDS; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TUNNEL JUNCTIONS
Optional Information
- Notes
- (c) 2016 AIP Publishing LLC