Published March 1994
| Version v1
Journal article
Plasma immersion ion implantation for semiconductor thin film growth
- 1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Description
A new experiment has been constructed to explore the potential of the plasma immersion ion implantation technique for thin film growth on semiconductor substrates. The experiment consists of an inductive plasma source, an ultrahigh vacuum vessel, and a 10 kV pulse generator. The first nitrogen and oxygen plasma results obtained with the inductive source are presented and analyzed
Additional details
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Journal Volume
- 12
- Journal Issue
- 2
- Journal Page Range
- p. 973-976.
- ISSN
- 0734-211X
- CODEN
- JVTBD9
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25054285
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ION IMPLANTATION; NITROGEN IONS; OXYGEN IONS; PLASMA SHEATH; SILICON; THIN FILMS
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; FILMS; IONS; SEMIMETALS