Published November 15, 1973
| Version v1
Journal article
Electrical properties of proton-bombarded Ga/sub 1-X/Al/sub x/As
Description
We have shown the feasibility of forming insulating walls in Ga1−xAlxAs by proton bombardment, and have demonstrated their stability up to a temperature of 180°C. The mean projected range of protons in Ga1−xAlxAs is determined for energies ranging from 200 to 1200 keV. The insulating properties of proton-bombarded layers are applied to the realization of cross-bar integrated arrays of electroluminescent diodes.
Additional details
Identifiers
- DOI
- 10.1063/1.1654743;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 23
- Journal Issue
- 10
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 546-547
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 5155045
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ALLOYS; ARSENIC ALLOYS; DIELECTRIC MATERIALS; ELECTRICAL PROPERTIES; ELECTROLUMINESCENCE; GALLIUM ALLOYS; HIGH TEMPERATURE; KEV RANGE 100-1000; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SEMICONDUCTOR DIODES
- Descriptors DEC
- ALLOYS; BEAMS; ENERGY RANGE; KEV RANGE; LUMINESCENCE; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent