Blistering study of H-implanted InGaAs for potential heterointegration applications

InGaAs epitaxial layers lattice-matched to InP were implanted by 100 keV H+ ions with a fluence of 1 × 1017 cm−2. The implantation-induced surface deformations were reported in the form of surface blistering and exfoliation (large area craters) after post-implantation annealing. Cross-sectional transmission electron microscopy of the as-implanted InGaAs showed the formation of an in-depth damage band with a width of about 350 nm, incorporated with platelet-like extended defects. Atomic force microscopy showed that the RMS roughness of the exfoliated regions was about 20 nm and the exfoliation depth was about 870 nm, which was close to the peak of hydrogen concentration for 100 keV hydrogen in InGaAs