Published 2006
| Version v1
Book
Impedance spectroscopy analysis of copper (II) oxide exhibiting high dielectric permittivity
Creators
- 1. Department of Solid State Physics, Indian Association for the Cultivation of Science, Kolkata (India)
Description
Giant dielectric constant is observed in properly annealed polycrystalline copper (11) oxide (Cu O) above 230 K. Scanning electron microscopic image and impedance spectroscopic studies of CuO demonstrate existence of semiconducting grains with insulating grain boundaries. The giant dielectric phenomena in CuO are attributed to the extrinsic mechanism due to formation of grain boundary (internal) barrier layer capacitance (IBLC) in CuO. (author)
Additional details
Publishing Information
- Publisher
- Prime Time Education
- Imprint Place
- Mumbai (India)
- ISBN
- 81-8372-030-7
- Imprint Title
- Proceedings of the DAE solid state physics symposium. V. 51
- Imprint Pagination
- 1058 p.
- Journal Page Range
- p. 745-746
Conference
- Title
- 51. DAE solid state physics symposium
- Dates
- 26-30 Dec 2006
- Place
- Bhopal (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 38112666
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COPPER OXIDES; GRAIN BOUNDARIES; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHALCOGENIDES; COPPER COMPOUNDS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; MICROSCOPY; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 4 refs., 3 figs.