Published November 2013 | Version v1
Miscellaneous Open

Development and characteristics of silicon photoelectric modules with vertical p-n structures

Creators

  • 1. Andijan State University, Andijan (Uzbekistan)

Description

no abstract available

Files

45115327.pdf

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Part of:
Proceedings of international conference dedicated to the seventieth anniversary of Physical-technical institute, SPA 'Physics-Sun' 'Fundamental and applied problems of physics'

Additional details

Additional titles

Original title (Russian)
Razrabotka i kharakteristiki kremnievykh fotoehlektricheskikh modulej s vertikal'nymi p-n-strukturami

Publishing Information

Publisher
Nauchno-proizvodstvennoe ob'edinenie 'Fizika-Solntse'
Imprint Place
Tashkent (Uzbekistan)
Imprint Title
Proceedings of international conference dedicated to the seventieth anniversary of Physical-technical institute, SPA 'Physics-Sun' 'Fundamental and applied problems of physics'
Imprint Pagination
398 p.
Journal Page Range
p. 73-75
Report number
INIS-UZ--179

Conference

Title
International conference dedicated to the seventieth anniversary of Physical-technical institute, SPA 'Physics-Sun' 'Fundamental and applied problems of physics'
Original Conference Title
Mezhdunarodnaya konferentsiya, posvyashchennaya 70-letiyu Fiziko-tekhnicheskogo instituta, NPO 'Fizika-Solntse' 'Fundamental'nye i prikladnye voprosy fiziki'
Dates
14-15 Nov 2013
Place
Tashkent (Uzbekistan)

Optional Information

Notes
5 refs.,1 tab. Imprint:Materialy mezhdunarodnoj konferentsii, posvyashchennoj 70-letiyu Fiziko-tekhnicheskogo instituta, NPO 'Fizika-Solntse' 'Fundamental'nye i prikladnye voprosy fiziki'