Published May 1, 2014
| Version v1
Journal article
1.2 MeV/amu Xe ion induced damage recovery in SiC
- 1. Centre for HRTEM, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)
- 2. Joint Institute for Nuclear Research, Dubna (Russian Federation)
Description
The microstructural changes of 4H-SiC samples dual irradiated with either low energy He (10 keV) or Ti (220 keV) and high energy (167 MeV) Xe ions has been studied using cross-sectional transmission electron microscopy. It was found that xenon ions with fluences above 1013 cm−2 restore crystallinity in a heavily damaged partially amorphous zone. No significant damage recovery was observed in fully amorphized layers of silicon carbide apart from a 5% reduction in the amorphous layer thickness
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2013.09.034Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2013.09.034;
- PII
- S0168-583X(14)00046-9;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 326
- Journal Page Range
- p. 337-340
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 17. international conference on radiation effects in insulators (REI)
- Acronym
- REI-2013
- Dates
- 30 Jun - 5 Jul 2013
- Place
- Helsinki (Finland)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46023591
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; CRYSTAL GROWTH; DAMAGE; HEAVY IONS; IRRADIATION; KEV RANGE; LAYERS; MATERIALS RECOVERY; MEV RANGE; MICROSTRUCTURE; SILICON CARBIDES; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; XENON IONS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; DIMENSIONS; ELECTRON MICROSCOPY; ENERGY RANGE; IONS; MANAGEMENT; MICROSCOPY; PROCESSING; SILICON COMPOUNDS; WASTE MANAGEMENT; WASTE PROCESSING
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.