Published May 1999 | Version v1
Miscellaneous Open

Peculiarities of radiation defects influence on degradation of photoenergetic characteristics of silicon solar cells

  • 1. AN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki

Description

In this report the radiation defects formed in silicon solar cells under proton irradiation and degradation of photoenergetic characteristics of solar cells are investigated. Their influence for an effective life-time of minority carriers are revealed. It was shown that the dominant recombination center is the level Ec-0.39 eV caused by divacancy. (author)

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Part of:
Abstracts of the international conference on space research, technology and conversion-IV

Additional details

Additional titles

Original title (Russian)
Особенности влияния хадиационных дефеcтов на деградацию фотоэнергетических характеристик кремниевых солнечных елементов

Publishing Information

Imprint Title
Abstracts of the international conference on space research, technology and conversion-IV
Imprint Pagination
15 p.
Journal Page Range
p. 90-92
Report number
INIS-UZ--064

Conference

Title
Space research, technology and conversion-IV
Dates
12-14 May 1999
Place
Tashkent (Uzbekistan)

Optional Information

Notes
1 tab. Imprint:Tezisy dokladov mezhdunarodnoj nauchno-prakticheskoj konferentsii 'Kosmicheskie issledovaniya, tekhnologii i konversii-IV'