Published May 1999
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Peculiarities of radiation defects influence on degradation of photoenergetic characteristics of silicon solar cells
- 1. AN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki
Description
In this report the radiation defects formed in silicon solar cells under proton irradiation and degradation of photoenergetic characteristics of solar cells are investigated. Their influence for an effective life-time of minority carriers are revealed. It was shown that the dominant recombination center is the level Ec-0.39 eV caused by divacancy. (author)
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Additional details
Additional titles
- Original title (Russian)
- Особенности влияния хадиационных дефеcтов на деградацию фотоэнергетических характеристик кремниевых солнечных елементов
Publishing Information
- Imprint Title
- Abstracts of the international conference on space research, technology and conversion-IV
- Imprint Pagination
- 15 p.
- Journal Page Range
- p. 90-92
- Report number
- INIS-UZ--064
Conference
- Title
- Space research, technology and conversion-IV
- Dates
- 12-14 May 1999
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 30032495
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- A CENTERS; E CENTERS; PHOTOVOLTAIC EFFECT; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SILICON SOLAR CELLS
- Descriptors DEC
- BEAMS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIRECT ENERGY CONVERTERS; EQUIPMENT; NUCLEON BEAMS; PARTICLE BEAMS; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; POINT DEFECTS; RADIATION EFFECTS; SOLAR CELLS; SOLAR EQUIPMENT; VACANCIES
Optional Information
- Notes
- 1 tab. Imprint:Tezisy dokladov mezhdunarodnoj nauchno-prakticheskoj konferentsii 'Kosmicheskie issledovaniya, tekhnologii i konversii-IV'