Hot electrons in zero-gap semiconductors with non-parabolic electronic band structure

Mobility μ and concentration n of electric-field-induced hot electrons are investigated in zero-gap HgCdTe with linear band structure at liquid helium temperatures. Taking into account the admixture of s-like wave functions, dielectric anomalies, and the renormalization of the heavy-hole spectrum it is shown that Coulomb scattering is the dominant mechanism for relaxation of momentum and energy at 4.2 K. Using rate equations and an electron temperature model the behaviour of μ and n is calculated up to electric field strength of 1.5 V/cm. (author)