Published August 15, 1979 | Version v1
Journal article Metadata-only

Growth of dislocations during laser melting and solidification

Creators

  • 1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830

Description

Silicon crystals containing dislocations which terminated in the free surface were melted to depths of about 0.5 μm by rube-laser pulses, and the growth characteristics of dislocations of various types were studied by transmission electron microscopy. It was found that both edge- and screw-type dislocations grew in <113> directions that were not normal to the crystal-growth interface

Additional details

Publishing Information

Journal Title
Appl. Phys. Lett.
Journal Volume
35
Journal Issue
4
Series
Appl. Phys. Lett.
Journal Page Range
330-332
ISSN
0003-6951

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
11499353
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL GROWTH; CRYSTALS; DEPTH; EDGE DISLOCATIONS; ELECTRON MICROSCOPY; INTERFACES; LASER-RADIATION HEATING; MELTING; PULSES; RUBY LASERS; SCREW DISLOCATIONS; SILICON; SOLIDIFICATION; SURFACES
Descriptors DEC
AMPLIFIERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; DISLOCATIONS; ELEMENTS; HEATING; LASERS; LINE DEFECTS; MICROSCOPY; PHASE TRANSFORMATIONS; PLASMA HEATING; SEMIMETALS; SOLID STATE LASERS