Published 1976 | Version v1
Report Restricted

Progress in the field of power semiconductor components

Creators

  • 1. Brown, Boveri und Cie A.G., Lampertheim (Germany, F.R.)

Description

For power semiconductors, besides high crystal perfection, homogeneous base doping is required in order to achieve high biasing potentials and above all, stable break-off performance. As phosphorus doping during the growth process results in doping variations of up to 20% the doping is achieved by nuclear transmutation of silicon 30 into phosphorus through neutron irradiation in a reactor. Here base dopings are achieved varying only by +- 3%. Examples are given of power diodes and power thyristors, as well as their improved characteristics, at base doping with neutrons. (ORU)

Availability note (English)

MF available from INIS under the Report Number.

Abstract (German)

Bei Leistungshalbleitern wird neben hoher Kristallperfektion eine homogene Grunddotierung gefordert, um hohe Sperrspannungen und vor allem stabiles Abbruchverhalten zu erreichen. Da die Phosphordotierung waehrend des Ziehprozesses zu Dotierungsschwankungen bis +- 20% fuehren, wird die Dotierung durch Kernumwandlung von Silizium 30 in Phosphor durch Neutronenbestrahlung im Reaktor durchgefuehrt. Hier erreicht man Grunddotierungen die nur um +- 3% schwanken. Angefuehrt werden Beispiele von Hochleistungsdioden und Hochleistungsthyristoren sowie deren verbesserte Charakteristika bei Grunddotierung mit Neutronen. (ORU)

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Additional details

Additional titles

Original title (German)
Fortschritte auf dem Gebiet der Leistungs-Halbleiterbauelemente

Publishing Information

Imprint Pagination
8 p.
Report number
AED-Conf--76-399-005

Conference

Title
VDE congress and 59. general meeting of the VDE.
Dates
11 - 14 Oct 1976.
Place
Muenchen, Germany, F.R.

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
8315601
Subject category
S07: ISOTOPES AND RADIATION SOURCES;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COMPARATIVE EVALUATIONS; CRYSTAL DOPING; NEUTRON BEAMS; NEUTRON REACTIONS; OPTIMIZATION; PHOSPHORUS; SEMICONDUCTOR MATERIALS; SILICON; SILICON DIODES; SILICON 30 TARGET; THYRISTORS
Descriptors DEC
BARYON REACTIONS; BEAMS; ELEMENTS; HADRON REACTIONS; NONMETALS; NUCLEAR REACTIONS; NUCLEON BEAMS; NUCLEON REACTIONS; PARTICLE BEAMS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; TARGETS

Optional Information

Notes
19 figs.