Published February 2000
| Version v1
Journal article
Enhancement of tunneling magnetoresistance through a magnetic barrier
Creators
Description
Magnetoresistance of a spin-filter junction is theoretically studied and a large polarization of the tunneling current is produced from spin-dependent barrier. Two kinds of spin-filter junctions are proposed and their magnetoresistance ratios are much larger than that of the conventional spin polarized tunneling junction at appropriate conditions
Additional details
Identifiers
- PII
- S0304885399006460;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 209
- Journal Issue
- 1-3
- Journal Page Range
- p. 61-64
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 34033569
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Descriptors DEI
- MAGNETORESISTANCE; MATHEMATICAL MODELS; POLARIZATION; SPIN; TUNNEL EFFECT
- Descriptors DEC
- ANGULAR MOMENTUM; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; PARTICLE PROPERTIES; PHYSICAL PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2000 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.