Published February 2000 | Version v1
Journal article

Enhancement of tunneling magnetoresistance through a magnetic barrier

Description

Magnetoresistance of a spin-filter junction is theoretically studied and a large polarization of the tunneling current is produced from spin-dependent barrier. Two kinds of spin-filter junctions are proposed and their magnetoresistance ratios are much larger than that of the conventional spin polarized tunneling junction at appropriate conditions

Additional details

Identifiers

PII
S0304885399006460;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
209
Journal Issue
1-3
Journal Page Range
p. 61-64
ISSN
0304-8853
CODEN
JMMMDC

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
34033569
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
Descriptors DEI
MAGNETORESISTANCE; MATHEMATICAL MODELS; POLARIZATION; SPIN; TUNNEL EFFECT
Descriptors DEC
ANGULAR MOMENTUM; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; PARTICLE PROPERTIES; PHYSICAL PROPERTIES

Optional Information

Copyright
Copyright (c) 2000 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.