Published June 1990
| Version v1
Journal article
A novel selective heteroepitaxial growth method of InP on GaAs by metallorganic vapor phase epitaxy
- 1. Toyohashi Univ. of Technology (Japan). Dept. of Electrical Engineering
Description
Selective heteroepitaxial layer of InP on GaAs, without ridge growth, and with uniform polycrystalline layers of high resistivity on the SiO2 mask, could be achieved. The procedure for the selective heteroepitaxy of InP on GaAs (process B') proposed by the authors is useful for the fabrication of high speed InP/GaAs OEICs
Additional details
Publishing Information
- Journal Title
- Journal of the Electrochemical Society
- Journal Volume
- 137
- Journal Issue
- 6
- Series
- J. Electrochem. Soc.
- Journal Page Range
- 1995-1998
- ISSN
- 0013-4651
- CODEN
- JESOA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22008033
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; EPITAXY; FABRICATION; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM PHOSPHIDES; INTEGRATED CIRCUITS; ORGANOMETALLIC COMPOUNDS; SILICON OXIDES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELECTRONIC CIRCUITS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; SURFACE COATING