Published June 25, 2004
| Version v1
Journal article
Growth of gallium oxide thin films on silicon by the metal organic chemical vapor deposition method
Creators
Description
We have deposited gallium oxide (Ga2O3) films on Si(1 0 0) substrates by metal organic chemical vapor deposition (MOCVD), by a reaction of a trimethylgallium (TMGa) and oxygen (O2) mixture. The effect of temperature on growth and structure of films has been investigated at temperatures of 500-600 deg. C. We revealed that the films were amorphous with very small crystallites. The films were smooth but the surface roughness increased with increasing the growth temperature
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2004.01.012;
- PII
- S0921510704000431;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 110
- Journal Issue
- 1
- Journal Page Range
- p. 34-37
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37046068
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GALLIUM OXIDES; MIXTURES; OXYGEN; ROUGHNESS; SILICON; SUBSTRATES; SURFACES; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; DISPERSIONS; ELEMENTS; FILMS; GALLIUM COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SURFACE COATING; SURFACE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.