Published February 11, 1999 | Version v1
Journal article

Experimental characterization of low-energy X-ray semiconductor detectors

  • 1. CEA/DAMRI-BNM/Laboratoire Primaire des Rayonnements Ionisants, B.P. 52, F-91193 Gif-sur-Yvette Cedex (France)
  • 2. University of Guelph, Guelph, Ontario NIG 2W1 (Canada)
  • 3. CEA/DAM-DRIF/DCRE/Service Diagnostics Experimentaux, B.P. 52, F-91680 Bruyeres-le-Chatel (France)

Description

Six semiconductor detectors (Si(Li) and HPGe) are calibrated in the 1-10 keV energy range by means of tunable monochromatized synchrotron radiation. Significant improvement in the quality of the response is observed in very recent detectors. A peak shape calibration is established using a modified Hypermet-type function to model the detector response for each energy step; a strong enhancement of the peak tail is shown above the binding energy for each detector material. Fano factors for both semiconductor materials are experimentally derived. This characterization will allow the improved processing of low-energy X-ray spectra by providing the intrinsic response of either kind of detector

Additional details

Identifiers

PII
S0168900298011115;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
422
Journal Issue
1-3
Journal Page Range
p. 428-432
ISSN
0168-9002
CODEN
NIMAER

Optional Information

Copyright
Copyright (c) 1999 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.