Improvement of crystallinity of CeO2 film by high energy ion radiation

Effects of heavy ions radiation on improvement of crystallinity of CeO2 film were evaluated. CeO2 film was formed by epitaxial growth on Si(100) base. The thickness of film was 120-180 nm. Relation between the improved amount of crystallinity and the ratio of elastic to inelastic energy added to CeO2 film indicated that the crystallinity improved process was introduced by the inelastic scattering process of ions and electrons. When the ratio is 200 or more, good effect on crystallity was obtained, but when 200 and less, the defect forming process depend on elastic scattering exceeded the crystallinity improved process. (S.Y.)