Published September 5, 2011 | Version v1
Journal article Metadata-only

Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

Creators

  • 1. Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)
  • 2. Oxide Electronics Research Team, Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of)
  • 3. Department of Materials Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of)
  • 4. Department of Materials Science and Engineering, WCU Hybrid Materials Program, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of)

Description

This study examined the effect of oxygen plasma treatment on light-enhanced bias instability in Zn-Sn-O (ZTO) thin film transistors (TFTs). The treated ZTO TFT exhibited only a threshold voltage (Vth) shift of -2.05 V under negative bias illumination stress (NBIS) conditions, whereas the pristine device suffered from a negative Vth shift of 3.76 V under identical conditions. X-ray photoelectron spectroscopic analysis revealed that the oxygen vacancy defect density was diminished via the oxygen plasma treatment. This suggests the Vth degradation under NBIS is due to photo-transition of oxygen vacancy defects.

Additional details

Identifiers

DOI
10.1063/1.3634053;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
99
Journal Issue
10
Journal Page Range
p. 102103-102103.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43116001
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CRYSTALS; ELECTRIC POTENTIAL; ILLUMINANCE; INSTABILITY; OXYGEN; PLASMA; SEMICONDUCTOR MATERIALS; STRESSES; THIN FILMS; TIN OXIDES; TRANSISTORS; VACANCIES; VISIBLE RADIATION; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC COMPOUNDS
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; IONIZING RADIATIONS; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; POINT DEFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SPECTROSCOPY; TIN COMPOUNDS

Optional Information

Notes
(c) 2011 American Institute of Physics