Published January 28, 2002 | Version v1
Journal article Metadata-only

Temperature-gradient epitaxy under in situ growth mode diagnostics by scanning reflection high-energy electron diffraction

Creators

  • 1. Combinatorial Materials Exploration and Technology Corporation (COMET) (Japan)
  • 2. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, 980-0812 (Japan)
  • 3. Institute for Solid State Physics, University of Tokyo, Kashiwanoha 5-1-5, Kashiwa-shi, Chiba, 277-8581 (Japan)
  • 4. Department of Innovative and Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan)
  • 5. CREST, Japan Science and Technology Corporation (Japan)
  • 6. Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan)

Description

We have developed a parallel film growth method on a temperature-gradient substrate to quickly control and optimize the film growth mode. A continuous-wave neodymium-doped yttrium-aluminum-garnet laser heating was used to achieve a stable temperature gradient covering a 300 deg. C range of temperatures over a distance of 11 mm. The growth mode was determined by time-resolved scanning reflection high-energy electron diffraction. Transition from layer-by-layer to step-flow growth by the deposition temperature was observed during La0.5Sr0.5MnO3 film growth on a single SrTiO3 substrate, proving a powerful tool not only for investigating the growth dynamics but also for seeking the optimized deposition conditions in one run of experiment

Additional details

Identifiers

DOI
10.1063/1.1445483;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
80
Journal Issue
4
Journal Page Range
p. 565-567
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35011204
Subject category
S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ELECTRON DIFFRACTION; FILMS; GROWTH; LANTHANUM OXIDES; MOLECULAR BEAM EPITAXY; REFLECTION; STRONTIUM OXIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; LANTHANUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; RARE EARTH COMPOUNDS; SCATTERING; STRONTIUM COMPOUNDS; TEMPERATURE RANGE

Optional Information

Notes
(c) 2002 American Institute of Physics.