VHF NEMS-CMOS piezoresistive resonators for advanced sensing applications
Creators
- 1. CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble (France)
- 2. Univ. Grenoble Alpes, F-38000 Grenoble (France)
Description
This work reports on top-down nanoelectromechanical resonators, which are among the smallest resonators listed in the literature. To overcome the fact that their electromechanical transduction is intrinsically very challenging due to their very high frequency (100 MHz) and ultimate size (each resonator is a 1.2 μm long, 100 nm wide, 20 nm thick silicon beam with 100 nm long and 30 nm wide piezoresistive lateral nanowire gauges), they have been monolithically integrated with an advanced fully depleted SOI CMOS technology. By advantageously combining the unique benefits of nanomechanics and nanoelectronics, this hybrid NEMS-CMOS device paves the way for novel breakthrough applications, such as NEMS-based mass spectrometry or hybrid NEMS/CMOS logic, which cannot be fully implemented without this association. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/25/43/435501Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 25
- Journal Issue
- 43
- Journal Page Range
- [8 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46082627
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- BEAMS; FIELD EFFECT TRANSISTORS; MASS SPECTROSCOPY; MHZ RANGE; NANOELECTRONICS; NANOWIRES; NEMS; RESONATORS; SILICON
- Descriptors DEC
- ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FREQUENCY RANGE; NANOSTRUCTURES; SEMICONDUCTOR DEVICES; SEMIMETALS; SPECTROSCOPY; TRANSISTORS