Structural, vibrational and magneto-electronic investigation of ruthenium based half heusler alloys: quantum-computational analysis
Creators
- 1. Institute of Physics, Bahauddin Zakariya Univeristy, Multan (Pakistan)
- 2. School of Chemical Engineering, Yeungnam University, 280 Daehak-ro Gyeongsan, Gyeongbuk, 38541, Gyeongsan (Korea, Republic of)
- 3. Botany and Microbiology Department, College of Science, King Saud University, Riyadh (Saudi Arabia)
Description
In this manuscript, the first theoretical study of half Heusler compounds RuCrZ (Z = Si, Ge) has been carried out in the context of Density Functional Theory (DFT). The structural, elastic-o-mechanical, electronic, vibrational and magnetic properties of half heusler alloy RuCrZ (Z = Si, Ge) were explored by WIEN2K Code. The energy of ground state and lattice constants were obtained using the optimization curves for both compounds. The elastic and mechanical properties confirmed that RuCrZ (Z = Si, Ge) were elastically stable as well as ductile. The energy band gap result shows there is no band gap for spin up channel that depicts the full metallic nature for RuCrGe while for spin down channel RuCrSi has largest band gap of 0.4 eV that corresponds to its polar nature as compared to the other alloys. The computed values of the lattice constant, as well as the other calculated physical characteristics, were quite close to the experimental values. In phonon dispersion curves optical branches are less coupled in RuCrGe while this effect is not at all observed in RuCrSi while magnetic moments of these materials are comparable to about 1μB, i.e., MTot ≈ 1 μB. (author)
Additional details
Identifiers
Publishing Information
- Journal Title
- Indian Journal of Physics (Online)
- Journal Volume
- 98
- Journal Issue
- 3
- Journal Page Range
- p. 975-984
- ISSN
- 0974-9845
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 55018465
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BAND THEORY; DENSITY FUNCTIONAL METHOD; DUCTILITY; GRADED BAND GAPS; HEUSLER ALLOYS; LATTICE PARAMETERS; MAGNETIC MOMENTS; RUTHENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ALLOYS; ALUMINIUM ALLOYS; CALCULATION METHODS; COPPER ALLOYS; COPPER BASE ALLOYS; CORROSION RESISTANT ALLOYS; MANGANESE ALLOYS; MATERIALS; MECHANICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; TENSILE PROPERTIES; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS