Ion-doped semiconductor coordinate detector for charged particles

The process of manufacture of an ion-doped detector with a p-n junction, which is sensitive to the place of incidence of charged particles, is described. In manufacturing the detector, use has been made of silicon bullions previously oriented in the (111) direction by the X-ray method with an accuracy of 0.5 deg. After the chemical and mechanical treatment, silicon plates of thickness 1 mm are cut into strips, 20x6 mm2 in size. The plates are alloyed with ions of 11B with an energy of 15 keV at a fluence of 1014 cm-2, ion flux density of 10μA/cm2, and at room temperature. The alloyed specimens are annealed in a vacuum of 10-6 Tor at a temperature of 400 deg C for 30 min. The results of measurement of the coordinate and energy characteristics of the ion-doped detector, whose working surface area is 10x4 mm2, are presented. For 5.5 MeV α-particles a coordinate resolution of 0.3 mm and an energy resolution of 36 keV has been obtained. Linearity with respect to the coordinate is not worse than 1%