Published March 2008 | Version v1
Journal article Metadata-only

Acoustic emission on the relaxation of local thermomechanical stresses in the process of degradation of light-emitting heterostructures on the basis of InGaN and GaAsP

Creators

  • 1. Yinstitut fyiziki napyivprovyidnikyiv, Kyiv (Ukraine)
  • 2. Kiyivs'kij natsyional'nij unyiversitet, Kyiv (Ukraine)

Description

We present the results of studies of the correlation of acoustic emission (AE) and reversible and irreversible change of electrophysical characteristics of the light-emitting heterostructures on the basis of InGaN and GaAsP in the process of their degradation on the passage of the forward current with a critical density

Additional details

Additional titles

Original title (Ukrainian)
Akustichna emyisyiya pri relaksatsyiyi lokal'nikh termomekhanyichnikh napruzhen' v protsesyi degradatsyiyi svyitlovipromyinyuyuchikh geterostruktur na osnovyi InGaN ta GaAsP

Publishing Information

Journal Title
Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
Journal Volume
53
Journal Issue
no.3
Journal Page Range
p. 240-246
ISSN
0372-400X

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
39107154
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AGING; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; EMISSION SPECTRA; GALLIUM ARSENIDES; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM NITRIDES; PHOTOCATALYSIS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CATALYSIS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SPECTRA