Published January 7, 2011
| Version v1
Journal article
CLARIS G2: Development of Carbon Cluster Implantation
Creators
- 1. Nissin Ion Equipment Co., Ltd, 575 Kuze Tonoshiro-cho, Minami-ku, Kyoto, 601-8205 (Japan)
- 2. SemEquip Inc., 34 Sullivan Road, Suite 18, Billerica, MA 01862 (United States)
Description
Nissin's boron and carbon cluster ion implanter CLARIS G2 has been developed for the mass production of next generation CMOS devices. Development of boron cluster implant technique was presented at last IIT conference in 2008 [1]. In this paper, development of carbon cluster (C16Hx+ and C7Hx+) implant technique is described. Carbon cluster implantation has been well productized in terms of throughput, beam quality and lifetime.
Additional details
Identifiers
- DOI
- 10.1063/1.3548416;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1321
- Journal Issue
- 1
- Journal Page Range
- p. 345-348
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 18. international conference on ion implantation technology
- Acronym
- IIT 2010
- Dates
- 6-11 Jun 2010
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42104643
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON IONS; CARBON IONS; CLUSTER BEAMS; EQUIPMENT; ION BEAMS; ION IMPLANTATION; ION PAIRS; ION SOURCES; IONIZATION; LIFETIME; MAGNETIC MATERIALS; MASS; MOS TRANSISTORS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; IONS; MATERIALS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- (c) 2010 American Institute of Physics