Published July 1988
| Version v1
Journal article
Conduction band discontinuity in InGaAs: InP and, Ga1-x Alx As: Ga1-y Aly As heterofunctions measured by eletrochemical C-V
- 1. TELEBRAS, Campinas (Brazil). Centro de Pesquisas
Description
Published in summary form only
Additional details
Additional titles
- Original title (Portuguese)
- Descontinuidade da banda de condicao em heterofuncoes InGaAs: InP e Ga
Publishing Information
- Journal Title
- Cienc. Cult. (Sao Paulo) Supl.
- Journal Volume
- 40
- Journal Issue
- 7
- Series
- Cienc. Cult. (Sao Paulo) Supl.
- Journal Page Range
- 352
- ISSN
- 0102-2474
- CODEN
- RRACD
Conference
- Title
- 40. Annual Meeting of the Brazilian Society for the Advancement of Science.
- Dates
- 10-16 Jul 1988.
- Place
- Sao Paulo, SP (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 19090367
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ALUMINIUM ADDITIONS; ALUMINIUM ARSENIDES; BAND THEORY; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; SCHOTTKY BARRIER DIODES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS