Published May 1, 2020 | Version v1
Journal article

Mo5+ doping induced interface polarization for improving performance of planar perovskite solar cells

  • 1. School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007 (China)

Description

In this paper, we investigate how interface-induced polarization affects the photovoltaic performance of hybrid perovskite solar cell (PSC) devices. The polarization of the hole transport layer (HTL) is regulated through incorporating metallic-like MoOx into PEDOT:PSS. The common MoO3 doped into PEDOT:PSS is used as a reference, and the device that used PEDOT:PSS-MoOx as the HTL shows an enhanced J sc and FF compared to the reference device. The open-circuit photovoltage decay and impedance spectroscopy measurements indicate that trap-assisted recombination is effectively suppressed at the interface between the hybrid perovskite and the PEDOT:PSS-MoOx HTL, while severe trap assisted recombination takes place at the perovskite/PEDOT:PSS and perovskite/PEDOT:PSS-MoO3 interface. We attribute these experimental findings to the fact that the incorporation of metallic-like Mo5+ into PEDOT:PSS enhances the conductivity of HTL and the interface polarization between PEDTOT:PSS layer and perovskite, which helps to induce an interface polarization electric field to facilitate separation of charges and screen the recombination between the traps and free charges. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/41/5/052203

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
41
Journal Issue
5
Journal Page Range
[8 p.]
ISSN
1674-4926