Structural characterization and electro-physical properties for SiOC(-H) low-k dielectric films

Low dielectric constant SiOC(-H) thin films with different structural orders were fabricated, and the influence of the replacement of Si-O bonds to the (Si-R) bonds on structural and electro-physical properties has been investigated. The structural characteristics can be explained on the basis of the optical emission spectra and the electrical properties. It was found that the excess -CH3 or Si-CH3 and Si-H bonds in SiOC(-H) films produced the effective positive charges coming from excessive interstitial defects. The electro-physical properties of the deposited films, such as capacity, Vfb shifts, density of charges and mechanisms of conduction strongly depended of the excessive (Si-CH3)+/(Si-O)- bonds ratio and have been significantly changed (controlled) by the addition of oxygen.