Diffraction of high energy electrons
Description
The diffraction of electrons by a crystal is examined to study its structure. As the electron-substance interaction is strong, it must be treated in a dynamic manner. Using the N waves theory and physical optics the base equations giving the wave at the outlet are deduced for a perfect crystal and their equivalence is shown. The more complex case of an imperfect crystal is then envisaged in these two approaches. In both cases, only the diffraction of high energy electrons ( > 50 KeV) are considered since in the diffraction of slow electrons back scattering cannot be ignored. Taking into account an increasingly greater number of beams, through fast calculations computer techniques, enables images to be simulated in very varied conditions. The general use of the Fast Fourier Transform has given a clear cut practical advantage to the multi-layer method
Availability note (English)
MF available from INIS under the Report Number.Abstract (French)
On examine la diffraction des electrons par un cristal pour etudier sa structure. L'interaction electron matiere etant forte, on doit la traiter de maniere dynamique. Par la theorie a N ondes et par l'optique physique on deduit les equations de base donnant l'onde a la sortie de la lame pour un cristal parfait et on montre leur equivalence. On envisage ensuite le cas plus complexe du cristal imparfait dans ces deux approches. Dans tous les cas on se limite a la diffraction des electrons de haute energie ( > 50 KeV) car dans la diffraction des electrons lents la retrodiffusion ne peut etre negligee. La prise en compte d'un nombre de faisceaux de plus en plus eleves, grace a des techniques rapides de calcul sur ordinateur permet de simuler des images dans des conditions tres variees. L'usage generalise de la Transformee de Fourier Rapide a donne un net avantage pratique a la methode multicoucheFiles
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Additional details
Additional titles
- Original title (French)
- Diffraction des electrons de haute energie
- Augmented title (English)
- > 50 keV
Publishing Information
- Imprint Pagination
- 17 p.
- Report number
- CEA-CONF--6000
Conference
- Title
- Summer school of electron microscopy in material sciences.
- Dates
- 21 Sep - 3 Oct 1981.
- Place
- Bombannes, France.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 13676410
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; KEV RANGE 10-100
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ENERGY RANGE; KEV RANGE; MICROSCOPY; SCATTERING