Published February 1976 | Version v1
Journal article

Charge collection in surface channels on high-purity Ge detectors

  • 1. Atomic Energy of Canada Ltd., Chalk River, Ont.

Description

Studies with collimated low energy γ-ray beams show that for γ-ray interactions within a ''dead layer'' of thickness about 1 mm at the surface of a Ge detector, the pulse height distribution is characteristic of single carrier collection. Independent measurements of the charge transport parameters also show that the majority carriers in the surface channel do not contribute to the charge pulse

Additional details

Identifiers

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
23
Journal Issue
1
Series
IEEE Trans. Nucl. Sci.
Journal Page Range
75-80
ISSN
0018-9499

Conference

Title
22. nuclear science symposium and 7. nuclear power systems symposium.
Dates
19 Nov 1975.
Place
San Francisco, CA, USA.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
7261262
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CARRIER LIFETIME; CARRIER MOBILITY; CHARGE COLLECTION; EFFICIENCY; ELECTRIC FIELDS; HIGH-PURITY GE DETECTORS; SURFACES; TRAPPING
Descriptors DEC
GE SEMICONDUCTOR DETECTORS; LIFETIME; MEASURING INSTRUMENTS; MOBILITY; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS

Optional Information

Notes
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