Published February 1976
| Version v1
Journal article
Charge collection in surface channels on high-purity Ge detectors
Description
Studies with collimated low energy γ-ray beams show that for γ-ray interactions within a ''dead layer'' of thickness about 1 mm at the surface of a Ge detector, the pulse height distribution is characteristic of single carrier collection. Independent measurements of the charge transport parameters also show that the majority carriers in the surface channel do not contribute to the charge pulse
Additional details
Identifiers
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 23
- Journal Issue
- 1
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 75-80
- ISSN
- 0018-9499
Conference
- Title
- 22. nuclear science symposium and 7. nuclear power systems symposium.
- Dates
- 19 Nov 1975.
- Place
- San Francisco, CA, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 7261262
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARRIER LIFETIME; CARRIER MOBILITY; CHARGE COLLECTION; EFFICIENCY; ELECTRIC FIELDS; HIGH-PURITY GE DETECTORS; SURFACES; TRAPPING
- Descriptors DEC
- GE SEMICONDUCTOR DETECTORS; LIFETIME; MEASURING INSTRUMENTS; MOBILITY; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent