Published February 1, 2011 | Version v1
Journal article

Study on XRDK Optical and Electrical performance of Transparent Conducting ZnO:Al(ZAO) Thin Films

  • 1. School of Transportation and Mechanical Engineering, Shenyang Jianzhu Uinversity, Shenyang, 110168 (China)
  • 2. School of Mechanical Engineering and Automation, Northeastern University, Shenyang 110004 (China)
  • 3. Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110015 (China)

Description

The ZAO (ZnO: Al) thin films were prepared by DC reactive magnetron sputtering technique. The XRD electrical and optical properties of films are particular investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure, and we are not find Al2O3 crystal phase. At the same time, we gained the high quality ZAO films with the minimum resistivuty of 4.5x10-4 Ω · cm, the transmittance in visible region above 80% and the reflectivity in IR region above 70%.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/276/1/012180

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
276
Journal Issue
1
Journal Page Range
[7 p.]
ISSN
1742-6596

Conference

Title
3. international Photonics and OptoElectronics Meetings
Acronym
POEM 2010
Dates
2-5 Nov 2010
Place
Wuhan (China)