Secondary electron images obtained with a standard PEEM set up

Secondary electron images excited by 3 to 4.3 keV electrons are obtained with a standard photoelectron electron emission microscope (PEEM) set up equipped with an imaging energy filter (IEF). The electron gun was mounted on a standard PEEM entrance flange at an angle of 25 o with respect to the sample surface. A low extraction voltage of 500 V was used to minimize the deflection of the electron beam by the PEEM extraction electrode. The secondary electron images are compared to photoelectron images excited by a standard 4.9 eV UV lamp. In the case of a Cu pattern on a Si substrate it is found that the lateral resolution without the IEF is about the same for electron and photon excitation but that the relative electron emission intensities are very different. The use of the IEF-reduces the lateral resolution. Images for secondary electron energies between eV1 and eV2 were obtained by setting the IEF to -V1 and -V2 ∼ -(V1 + 5V) potentials and taking the difference of both images. Images up to 100 eV electron energies were recorded. The lateral resolution is in the range of μm. The material contrast obtained in these difference images are discussed in terms of a secondary electron and photoelectron emission model and secondary electron energy spectra measured with a LEED-Auger spectrometer. (author)