Published October 2009
| Version v1
Journal article
Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode
Creators
- 1. Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094 (China)
Description
The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reffection-mode uniform doping cathode, substituting LDE for LD, the equivalent quantum efficiency equation of the reffection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/26/10/104202Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 26
- Journal Issue
- 10
- Journal Page Range
- [3 p.]
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44123136
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COMPUTERIZED SIMULATION; DIFFUSION; DOPED MATERIALS; ELECTRONS; GALLIUM ARSENIDES; PHOTOCATHODES; QUANTUM EFFICIENCY; REFLECTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CATHODES; EFFICIENCY; ELECTRODES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; MATERIALS; PNICTIDES; SIMULATION