Published October 2009 | Version v1
Journal article

Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode

  • 1. Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094 (China)

Description

The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reffection-mode uniform doping cathode, substituting LDE for LD, the equivalent quantum efficiency equation of the reffection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/26/10/104202

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
26
Journal Issue
10
Journal Page Range
[3 p.]
ISSN
0256-307X
CODEN
CPLEEU