Improvement of electrophysical and spectrometric parameters of silicon radiation detectors under positron irradiation

Investigations of methods of improvement of electrophysical and spectrometric parameters of silicon radiation detectors haVe been carried out to obtain new experimental data on the effect of positron irradiation on their operation parameters. The above investigations reveal that low-intensity positron irradiation essentially improves silicon radiation detector parameters. The greatest effect has been observed for detectors, which operation parameters grew worse during operation. The chain process of defect annihilation in semiconductors, initiated by low-intensity positron irradiation, may be considered as a possible cause of the effect