Mesoscopic variance of dislocation displacements in semiconductor crystals

It is shown that a large variance of dislocation displacements found experimentally and the delay in its relaxation to a steady value in semiconductor materials can be explained by the stochastic nature of the dislocation-kink formation. This stochastic nature results in the development of dislocation-line roughness described by the scaling relations, including the mesoscopic time and space scales.