Published February 2, 2009
| Version v1
Journal article
Electrical depth profiling in thin SiON layers
Creators
- 1. Materials Science and Engineering, Tel-Aviv University, Ramat-Aviv 69978 (Israel)
- 2. School of Electrical Engineering, Tel-Aviv University, Ramat-Aviv 69978 (Israel)
- 3. Materials and Interfaces, The Weizmann Institute of Science, Rehovot 76100 (Israel)
- 4. Chemical Research Support, The Weizmann Institute, Rehovot 76100 (Israel)
Description
The internal structure of SiON films is extracted electrically, demonstrating an efficient, noncontact, nondestructive means for depth compositional analysis in gate oxides. The electrical data, obtained using x-ray photoelectron spectroscopy (XPS) based controlled surface charging (CSC), are compared with independent time of flight secondary ion mass spectroscopy and angle resolved XPS data. Inhomogeneous composition with significant nitrogen enrichment at the top of the oxide layer is observed. Capabilities of the CSC method in treating heterostructures of poor chemical contrast are discussed
Additional details
Identifiers
- DOI
- 10.1063/1.3073050;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 94
- Journal Issue
- 5
- Journal Page Range
- p. 053116-053116.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051325
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ION MICROPROBE ANALYSIS; LAYERS; MASS SPECTROSCOPY; NITROGEN; OXIDES; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; THIN FILMS; TIME-OF-FLIGHT METHOD; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL ANALYSIS; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; MATERIALS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; NONMETALS; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SPECTROSCOPY
Optional Information
- Notes
- (c) 2009 American Institute of Physics