Published February 1997
| Version v1
Miscellaneous
The use of admittance methods in determining the properties of deposited polysilicon
Description
no abstract available
Availability note (English)
Available from British Library Document Supply Centre- DSC:DXN016938Additional details
Publishing Information
- Imprint Pagination
- [vp.]
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 31046523
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Thesis, Non-conventional Literature
- Descriptors DEI
- CAPACITANCE; CAPACITORS; DEPOSITION; FILMS; SILICON
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; PHYSICAL PROPERTIES; SEMIMETALS