Published February 1997 | Version v1
Miscellaneous

The use of admittance methods in determining the properties of deposited polysilicon

Description

no abstract available

Availability note (English)

Available from British Library Document Supply Centre- DSC:DXN016938

Additional details

Publishing Information

Imprint Pagination
[vp.]

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
31046523
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Thesis, Non-conventional Literature
Descriptors DEI
CAPACITANCE; CAPACITORS; DEPOSITION; FILMS; SILICON
Descriptors DEC
ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; PHYSICAL PROPERTIES; SEMIMETALS