NUV/VIS sensitive multicolor thin film detector based on a-SiC:H/a-Si:H/μc-SiGeC:H alloys with an in-situ structured transparent conductive oxide front contact without etching

An innovative family of hydrogenated amorphous silicon (a-Si:H) multicolor p–i–n photo sensors, sensitive in the VIS and the near UV spectrum, is presented. Typical values of the quantum efficiency at 350 nm and 580 nm are 5.4% and 54.7%, respectively, with − 0.4 V and − 12 V bias. Electro-optical studies were performed to explore the effect of combining linearly graded a-SiGe:H/μc-SiGeC:H layers with linearly graded a‐SiC:H-layers. The devices presented additionally contain a buried a-Si:H region. Low-reflective aluminum doped zinc oxide (ZnO:Al) back contacts improve the spectral color separation. μτ-products and absorption coefficients of graded absorbers were determined. Discrete absorbers were substituted by a linear graded a-SiC:H absorption zone in the top structure, an interior a-Si:H region and a graded a-SiGe:H/a-SiC:H alloy combination. In this paper we demonstrate a reduction of interference fringes and operation at low bias voltages, combined with a highly precise adjustment of the spectral sensitivity, even in the near UV-spectrum. The device dynamic range exceeds 50 dB at 1000 lx white-light illumination. As the deposited upper layers adopt the roughness of μc-SiGeC:H clusters in the rear absorber, we present an in-situ structured front contact without etching ZnO:Al. - Highlights: ► Structuring zinc oxide anode without etching ► UV/VIS amorphous silicon sensor ► Microcrystalline narrow gap absorber ► Significant color separation improvement