Published August 2020
| Version v1
Journal article
Hopping Conduction in AgSbSe2 and (AgSbSe2)0.9(PbTe)0.1
- 1. Institute of Physics, Academy of Sciences of Azerbaijan (Azerbaijan)
- 2. Institute of Physical Problems, Baku State University (Azerbaijan)
Description
Abstract
: AgSbSe2 and (AgSbSe2)0.9(PbTe)0.1 have been characterized by X-ray diffraction, differential scanning calorimetry, and temperature-dependent electric conductivity and thermoelectric power measurements in the range 80–330 K. The results demonstrate that charge transport in both materials is due to hopping of charge carriers between localized states. We have evaluated the temperature range of hopping conduction and the Fermi level density of localized states in these materials.Additional details
Identifiers
Publishing Information
- Journal Title
- Inorganic Materials
- Journal Volume
- 56
- Journal Issue
- 8
- Journal Page Range
- p. 779-784
- ISSN
- 0020-1685
- CODEN
- INOMAF
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55071322
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CALORIMETRY; CHARGE CARRIERS; CHARGE DENSITY; CHARGE STATES; CHARGE TRANSPORT; DENSITY OF STATES; ELECTRIC CONDUCTIVITY; ENERGY-LEVEL DENSITY; FERMI LEVEL; LEAD TELLURIDES; TEMPERATURE DEPENDENCE; TEMPERATURE MEASUREMENT; THERMOELECTRIC PROPERTIES; THERMOELECTRICITY; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRICITY; ENERGY LEVELS; LEAD COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2020 © Pleiades Publishing, Ltd. 2020