Published March 2009 | Version v1
Journal article Metadata-only

Evaluation of the transport parameters of the thick film resistors based on RuO2 lead-silicate glasses from optical and infrared spectra

Creators

  • 1. Institute of Power Engineering, Tashkent (Uzbekistan)
  • 2. International Center for Theoretical Physics, Trieste (Italy)

Description

Transport parameters of the RuO2 based thick film resistors (TFR) such as free carrier's concentration n, their mobility μ, momentum relaxation time τp and mean free path l were evaluated from electric measurements, infrared and optical spectra. Received values (n ≅ 1020-1021 cm-3, μ≅ 7.8x10-4 cm2/V·s, τp ≅8x10-14 s and l < 8x10-7 cm) show that free carrier's gas in the samples is degenerated, and high resistivity of TFR is due to a small value of free path length of carriers. (authors)

Additional details

Publishing Information

Journal Title
Uzbekiston Fizika Zhurnali
Journal Volume
11
Journal Issue
2
Journal Page Range
p. 141-144
ISSN
1025-8817

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
41028043
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARRIER MOBILITY; CARRIERS; EVALUATION; FILMS; GLASS; INFRARED SPECTRA; LEAD SILICATES; MEAN FREE PATH; PHOTORESISTORS; RELAXATION TIME; RUTHENIUM OXIDES
Descriptors DEC
CHALCOGENIDES; ELECTRICAL EQUIPMENT; EQUIPMENT; LEAD COMPOUNDS; MOBILITY; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; RESISTORS; RUTHENIUM COMPOUNDS; SILICATES; SILICON COMPOUNDS; SPECTRA; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
8 refs, 4 figs.