Published July 2006 | Version v1
Journal article

First principles study of extensive doping of C60 with silicon

  • 1. Laboratory of Physics, Helsinki University of Technology, P.O.Box 1100, FIN-02015 HUT, (Finland)
  • 2. Institut de Physique et Chimie des Materiaux de Strasbourg, UMR 7504 CNRS, Universite Louis Pasteur, 23, rue du Loess, BP43 F-67034 Strasbourg Cedex 02, (France)

Description

Density functional calculations and structural minimization techniques have been employed to characterize the structural and electronic properties of the heterofullerene C30Si30. Nine different isomers are investigated. We find that the most stable isomers are those featuring two distinct homogeneous subunits made of silicon atoms and carbon atoms. An analysis of the electronic properties reveals the highly polar character for this nanostructure

Additional details

Identifiers

DOI
10.1016/j.msec.2005.09.091;
PII
S0928-4931(05)00287-0;

Publishing Information

Journal Title
Materials Science and Engineering. C, Biomimetic Materials, Sensors and Systems
Journal Volume
26
Journal Issue
5-7
Journal Page Range
p. 1224-1227
ISSN
0928-4931

Conference

Title
Symposium A - Current trends in nanoscience - from materials to applications
Acronym
EMRS spring meeting 2005
Dates
31 May - 3 Jun 2005
Place
Strasbourg (France)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38066259
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMS; DENSITY FUNCTIONAL METHOD; FULLERENES; ISOMERS; NANOSTRUCTURES; SILICON
Descriptors DEC
CALCULATION METHODS; CARBON; ELEMENTS; NONMETALS; SEMIMETALS; VARIATIONAL METHODS

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.