Published February 3, 2014 | Version v1
Journal article

Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film

  • 1. Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064 (India)
  • 2. International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064 (India)

Description

It is found that the oxygen vacancy (VO) defect concentration affecting the separation between individual species in LiZn-Lii complex influences the optical emission property of Li0.06Zn0.94O epitaxial thin film grown by pulsed laser deposition. The film grown under low oxygen partial pressure (n-type conductivity)/higher partial pressure (resistive-type) has broad emission at ∼2.99 eV/∼2.1 eV and a narrower emission at 3.63 eV/3.56 eV, respectively. First principle based mBJLDA electronic structure calculation suggests that the emission at 2.99 eV is due to the LiZn-Lii pair complex and the emission at 2.1 eV is when the component species are away from each other

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
5
Journal Page Range
p. 051908-051908.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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