Published July 1, 2010
| Version v1
Journal article
Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers
Creators
- 1. Departamento de Ciencia de los Materiales e I. M. y Q. I., Facultad de Ciencias, Universidad de Cadiz, 11510 Puerto Real, Cadiz (Spain)
- 2. School of Physics and Astronomy, University of Nottingham, NG7 2RD Nottingham (United Kingdom)
- 3. Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, NG7 2RD Nottingham (United Kingdom)
Description
The influence of post-growth annealing on the microstructure and photoluminescence (PL) of GaAsBi alloys grown on (3 1 1)B GaAs is analyzed. Conventional transmission electron microscopy (TEM) performed on as-grown samples evidence the presence of structural defects and a mosaic structure in the GaAsBi layer. A sequence of stacking faults at regions close to the GaAs/GaAsBi interface are observed in high resolution TEM images. After annealing at 473 K during 3 h the mosaic structure disappears, the presence of defects is reduced and the PL peak intensely enhances.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2010.03.017Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2010.03.017;
- PII
- S0169-4332(10)00308-9;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 256
- Journal Issue
- 18
- Journal Page Range
- p. 5688-5690
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- International conference on progress in applied surface, interface and thin film science - Solar renewable energy news II
- Acronym
- SURFINT-SREN II
- Dates
- 15-20 Nov 2009
- Place
- Florence (Italy)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44018604
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALLOYS; ANNEALING; ARSENIC COMPOUNDS; BISMUTH COMPOUNDS; CRYSTAL DEFECTS; GALLIUM COMPOUNDS; INTERFACES; LAYERS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RESOLUTION; SEMICONDUCTOR MATERIALS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; EMISSION; EPITAXY; HEAT TREATMENTS; LUMINESCENCE; MATERIALS; MICROSCOPY; PHOTON EMISSION; PHYSICAL PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.