Determination of carrier mobility and density in semiconductors by the contactless magnetoplasma methods

Considered are new contactless electromagnetic magnetoplasma methods for investigating conductivity parameters in semiconductors in the region of classically weak (<μ>B<<1) and intermediate (<μ>B approximately 1) magnetic fields. A semiconductor is placed into a constant magnetic field but, unlike the Hall measurements where determined are electric field components in a semiconductor with current, measurements according to the new methods include the contactless determination of the components of a variable magnetic field excited in the semiconductor. The case of an isotropic semiconductor was considered. It is shown that the new methods permit to determine the Hall mobility and charge carrier concentration in the region of weak magnetic fields. In the region of intermediate fields the factor γ1, included as a multiplier in expressions for experimentally measured nondiagonal component of conductivity tensor, has a simpler dependence on the magnetic field as compared with the Hall factor. This permit to determine drift mobility and exact concentration. Experimental measurements of electron mobility and density in InSb and Ge are given