Published 1900
| Version v1
Report
Electrical activity of dopant atoms and radiation damage
Creators
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Research Activities 1973
- Imprint Pagination
- p. D3.
- Report number
- INIS-mf--1633
INIS
- Country of Publication
- Sweden
- Country of Input or Organization
- Sweden
- INIS RN
- 6162594
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Progress Report, No Abstract
- Descriptors DEI
- ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE; ION BEAMS; ION IMPLANTATION; ISOTHERMAL PROCESSES; MEDIUM TEMPERATURE; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; HEAT TREATMENTS; IONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only.