Photoreceiver structures with extended functional potentiality on the CdTe base

Structures with a high-resistance thin sublayer between two oppositely directed potential barriers based on CdTe and the photoelectric and electrophysical processes taking place in these structures are investigated. It is shown that at the longitudinal illumination of the sample, the areas of the spatial charges of the oppositely directed barriers give an opposite contribution to the photoresponse of the structure, which results in a change in the sign of the spectral photocurrent. Due to the linear dependence of the inversion point λinv of the spectral photocurrent on the bias voltage, the investigated structures can be used for determining the wavelength of an unknown radiation