A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure

A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation. The proposed device features an embedded NPN structure at the anode side, and double trenches together with an N-type carrier storage (N-CS) layer at the cathode side, named DT-NPN LIGBT. The NPN structure not only acts as an electron barrier to eliminate the snapback effect in the on-state within a smaller cell pitch but also provides an extra electron extracting path during the turn-off stage to decrease the turnoff loss (E _off). The double cathode trenches and N-CS layer hinder the hole from being extracted by the cathode quickly. They then enhance carrier storing effect and lead to a reduced on-state voltage drop (V _on). The latch-up immunity is improved by the double cathode trenches. Hence, the DT-NPN LIGBT obtains a superior tradeoff between the V _on and E _off. Additionally, the DT-NPN LIGBT exhibits an improved blocking capability and weak dependence of breakdown voltage (BV) on the P⁺ anode doping concentration because the NPN structure suppresses triggering the PNP transistor. The proposed LIGBT reduces the E _off by 55% at the same V _on, and improves the BV by 7.3% compared to the conventional LIGBT. (paper)