Published February 26, 2007 | Version v1
Journal article

Magnesium fluoride modified interfaces for organic light-emitting diode

  • 1. Institute of Materials Research and Engineering, National University of Singapore (Singapore) and Center of Optoelectronics, National University of Singapore (Singapore)
  • 2. Center of Optoelectronics, National University of Singapore (Singapore)
  • 3. Institute of Materials Research and Engineering, National University of Singapore (Singapore)

Description

Various thicknesses of magnesium fluoride (MgF2) ultrathin films were inserted between electroluminescence layer and cathode in poly(p-phenylene vinylene) (PPV)-based organic light-emitting devices. It is observed that device with 0.4 nm of MgF2 has the highest luminance and current efficiency. At 7 V operation, the current efficiency has improved by approximately 1.5 times as compared to the standard device. The increase in device current and the improvement in efficiency are due to increased electron injection, leading to more balanced hole and electron numbers. At the same time, device with a layer of MgF2 inserted between anode indium tin oxide and polyethylenedioxythiophene has also shown obvious improvement in performance. It is observed that the device with 0.4 nm of MgF2 in anode side has the highest luminance and current efficiency. The improvement of the device performance in anode side are due to smoothened interface which boosts hole injection and the fluoride ions doping the PPV materials resulting in an increase of its electron affinity which mitigates the electron and hole's number imparity

Additional details

Identifiers

DOI
10.1016/j.tsf.2006.10.129;
PII
S0040-6090(06)01303-4;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
515
Journal Issue
7-8
Journal Page Range
p. 3881-3886
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.