An approach of molecular orbital calculations to process plasmas

Remarkable progresses in the development of personal computers and molecular orbital methods have made it possible the calculation of complicated properties of molecules, which has been impossible so far. On the other hand, the plasma process such as reactive ion etching has been development while many plasma phenomena being unsolved. For the further development of the process, it is essential to make basic phenomena and problems in the plasma process clear. In the present article, an introduction to molecular orbital calculations is being presented for convenience of beginners in this field. (J.P.N.)