Nonlinear optics in semiconductors

Physical phenomena taking place during the optical processing of signals in semiconductors are described. The effect is discussed where the motion of light-excited carriers in the electro-optical material affects the internal electric field and so changes the refractive index and transparency of the layer also in the p-i-n semiconductor structure. The possible geometrical arrangements of nonlinear semiconductor elements are given. The semiconductor element length with respect to the refractive index is discussed, as is the problem of carrier life extension. A higher gain can be attained by an electrorefractive photoreaction. (J.B.). 6 figs., 18 refs