Published December 17, 2012
| Version v1
Journal article
Local photocurrent generation in thin films of the topological insulator Bi2Se3
- 1. Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4a, 85748 Garching (Germany)
- 2. Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Description
We report on the optoelectronic properties of thin films of Bi2Se3 grown by molecular beam epitaxy. The films are patterned into circuits with typical extensions of tens of microns. In spatially resolved experiments, we observe submicron photocurrent patterns with positive and negative amplitudes. The patterns are independent of the applied bias voltage, but they depend on the width of the circuits. We interpret the patterns to originate from a local photocurrent generation due to potential fluctuations.
Additional details
Identifiers
- DOI
- 10.1063/1.4772547;
- arXiv
- arXiv:1210.4743v1;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 101
- Journal Issue
- 25
- Journal Page Range
- p. 251110-251110.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44048346
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMPLITUDES; BISMUTH SELENIDES; FLUCTUATIONS; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; THIN FILMS
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EPITAXY; FILMS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; VARIATIONS
Optional Information
- Notes
- (c) 2012 American Institute of Physics