Spin transport properties in zigzag silicon carbide nanoribbon nanojunctions by asymmetric hydrogenation and BN doping

Based on asymmetric edge hydrogenation of zigzag silicon carbide nanoribbons (ZSiCNRs), the nanojunction with the boron and nitrogen impurity are constructed. The spin transport properties of nanojunction are calculated in different magnetic configurations by using the non-equilibrium Green's function method and density functional theory. Our findings show the N atom prefers to substitutes for C site while the B atom prefers the Si site. The obtained I–V characteristics indicate that the spin-down and spin-up states filtered in parallel and antiparallel configurations, respectively, which can be used for designing spintronic devices. Moreover, the spin-resolved negative differential resistance (NDR) effect occurs in the spin-polarized currents. (paper)